CONICET | Buscador de Institutos y Recursos Humanos

A high-k HfO2/SiO2 gate stack is taking the place of SiO2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO2 and amorphous SiO2 powder mixture has been carried out by Perturbed Angular Correlations (PAC) technique. The study was complemented with X-ray Diffraction and Positron Annihilation Lifetime Spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO4 (hafnon) was observed in the milled blends annealed at high temperatures. The PAC results of the milled samples are compared with those obtained for pure m-ZrO2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO2-SiO2.