Phase Transformation of TiO2 Thin Films as Function of Bias Voltage

L. FRANCO ARIAS; M. FAZIO; E. HALAC; D. VEGA; E. HEREDIA; A. KLEIMAN; A. MARQUEZ

Procedia Materials Science

Elsevier

Año: 2015 vol. 8 p. 39 - 45

Titanium dioxide thin films have been deposited on silicon (100) and 316L stainless steel substrates by cathodic arc deposition inoxygen atmosphere with a titanium cathode. The process was run at room temperature and at 300 ºC, biasing the substrate withpulsed voltage (up to ?10 kV) and DC voltage (up to -120 V). The crystalline structure was studied by Raman spectroscopy andX-ray diffraction. At room temperature, the films were obtained with an amorphous base with small isolated crystals of rutile andanatase. At 300 ºC, with DC bias, samples grew crystalline with the presence of both anatase and rutile.