Formation of thin cobalt silicide nanohexagons buried in single crystalline Si substrates. Effects of orientation of the external surface of the Si host

KELLERMANN, G.; MONTORO, L.; DOS SANTOS CLARO, P.C.; GIOVANETTI, L. J.; ZHANG, L.; REQUEJO, F.G.; RAMÍREZ. A. J.; CRAIEVICH, A.F.

Sydney

Conferencia; 15th International Small Angle Scattering Conference; 2012

Co atoms initially embedded in a SiO2 thin film deposited on Si(001), Si(011) and Si(111) substrates and each of them subjected to a isothermal treatment during 1 hour at 750 oC diffuse into the Si single crystal, react with Si atoms and form CoSi2 nanoplates. On the other hand, a fraction of Co atoms remain inside the thin SiO2 film forming spherical nanoparticles. The structural features of both, thin nanoplates buried in the different Si substrates and spherical nanoparticles embedded in the SiO2 thin films, were investigated by transmission electron microscopy (TEM) and grazing -incidence smallangle X-ray scattering (GISAXS).