Influence of Tungsten Doping on the Ferroelectric Behavior of Sr0.8 Bi2.3 Ta2 O9 Thin Films

M. L. SANTIAGO; R. MACHADO; M. G. STACHIOTTI; MARCELO SEPLIARSKY

FERROELECTRICS

TAYLOR & FRANCIS LTD

Año: 2010 vol. 406 p. 168 - 175

0015-0193

The substitution effect of W +6 at Ta+5 site on the structural, dielectric and ferroelectricproperties of Bi-rich Sr0.8 Bi2.3 Ta2 O9 (SBT) thin films is reported. Samples of compo-sitions Sr0.8-x/2 Bi2.3 Ta2-x Wx O9 (SBTW) with x ranging from 0.0 to 0.2 were synthesizedby a chemical solution deposition technique using non-hydrolyzing precursors. The mi-crostructure and ferroelectricity of SBTW films as functions of dopant concentration andannealing temperature were studied. Well-defined hysteresis loops were obtained for thedoped films annealed between 650◦ C and 750◦ C. The ferroelectric properties, however,were not improved compared to those of undoped SBT films due to the appearance of anon-ferroelectric secondary phase.