IFLYSIB 05383
INSTITUTO DE FISICA DE LIQUIDOS Y SISTEMAS BIOLOGICOS
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Study of Radiation Effects on PIN Photodiodes with Deep-Trap Levels using Computer Modeling
Autor/es:
M.A.CAPPELLETTI; A.P.CEDOLA; S.BARÓN; G.CASAS; E. L. PELTZER Y BLANCÁ
Lugar:
Río de Janeiro, Brasil
Reunión:
Workshop; 10th IEEE Latin American Test Workshop (LATW´09).; 2009
Institución organizadora:
IEEE (Institute of Electrical and Electronics Engineers).
Resumen:
In the present work, a complete numerical analysis
of the influence of deep-trap levels on the dark current
of silicon PIN photodiodes under 1 MeV neutron
radiation was done. Results corroborate that energy
levels near the mid-gap affect to a great extent the
dark current. Radiation tolerances of undoped and
gold-doped devices were compared through
simulations. It has been concluded that gold in silicon
reduces the neutron-induced damage. Finally, a model
to calculate the dark current of irradiated devices
doped with deep-impurities is presented.
