INSTITUTO DE FISICA DE LIQUIDOS Y SISTEMAS BIOLOGICOS
Unidad Ejecutora - UE
congresos y reuniones científicas
Study of Radiation Effects on PIN Photodiodes with Deep-Trap Levels using Computer Modeling
M.A.CAPPELLETTI; A.P.CEDOLA; S.BARÓN; G.CASAS; E. L. PELTZER Y BLANCÁ
Río de Janeiro, Brasil
Workshop; 10th IEEE Latin American Test Workshop (LATW´09).; 2009
IEEE (Institute of Electrical and Electronics Engineers).
In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of undoped and gold-doped devices were compared through simulations. It has been concluded that gold in silicon reduces the neutron-induced damage. Finally, a model to calculate the dark current of irradiated devices doped with deep-impurities is presented.