IFLYSIB 05383
INSTITUTO DE FISICA DE LIQUIDOS Y SISTEMAS BIOLOGICOS
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Spectral response in proton irradiated PIN photodiodes
Autor/es:
A.P.CEDOLA; M.A.CAPPELLETTI; E.L.PELTZER Y BLANCA
Lugar:
Puebla, Mexico
Reunión:
Workshop; 9th IEEE Latin American Test Workshop (LATW08); 2008
Institución organizadora:
IEEE
Resumen:
A computer program for the simulation of semiconductor devices has been developed and applied to analysis of radiation effects on Si PIN photodiodes. Optical characteristics such as Spectral Response under reverse bias conditions were determined in the infrared band at room temperature. The effects of the radiation studied were the atomic displacement damages. The study has allowed the authors to propose useful analytical model. Peak Spectral Response has shown a marked dependence on device layers dimensions.
