Analysis of the relationship between the concentration of front impurities and resistivity of the base region and the radiation resistance and performance of silicon solar cells

M.A.CAPPELLETTI; G.CASAS; A.P.CEDOLA; E. L. PELTZER Y BLANCÁ

Roma

Workshop; NUSOD 11th International Conference; 2011

NUSOD

Silicon solar cells of n+-p-p+ structure with total lengths of 50 µm have been analyzed at air mass 0 (AM0) by means of a computational code developed by the authors. Numerical simulations were carried out varying the main parameters to be considered during the design phase of these devices: the front and base impurities concentrations. The variation of the electrical parameters of the solar cells under 10 MeV proton irradiation has been investigated. Simulation results have agreed with experimental values. The selection of parameter values for increased radiation resistance involves a decrease in the optimum power. Be assessed a compromise between both objectives