KOHKI EGUCHI; YUDAI SUEHIRO; ROMUALDO A. FERREYRA; YASUO OHNO; MASATAKA HIGASHIWAKI

Structural Design of High-Frequency Ga2O3 Schottky Barrier Diodes for Application to Microwave Wireless Power Transmission

JSAP 71 Spring Meeting 2024

Lugar: Tokyo; Año: 2024;

KOHKI EGUCHI; YUDAI SUEHIRO; ROMUALDO A. FERREYRA; YASUO OHNO; MASATAKA HIGASHIWAKI

Structural Design of High-Frequency Ga2O3 Schottky Barrier Diodes for Microwave Wireless Power Transmission

The 7th U.S. Gallium Oxide Workshop (GOX 2024)

Año: 2024;

FERREYRA, ROMUALDO ALEJANDRO

Ohmic Contacts for Wide and Ultrawide Bandgap Semiconductors

OPEN TECH Symposium

Lugar: Kyoto; Año: 2023;

SEKI YUSUKE; OKADA ARIFUMI; KAJITA YUKI; NISHINAKA HIROYUKI ; FERREYRA, ROMUALDO ALEJANDRO; UEDA DAISUKE; KADONO KOHEI

SPM study on initial stage of epitaxial growth of NiO on β-Ga2O3(2̄01) surface

The 68Th Japanese Society of Applied Physics spring meeting.

Año: 2021;

OKADA ARIFUMI; FERREYRA, ROMUALDO ALEJANDRO; NAGAHARA N.; UEDA, DAISUKE; KADONO KOHEI

Effect of surface treatment on the β-Ga 2 O 3 surface structure

28th International Colloquium on Scanning Probe Microscopy

Año: 2020;

NAKATANI MASAHIRO; OKADA ARIFUMI; FERREYRA ROMUALDO A.; DAISUKE UEDA; KADONO KOHEI

Effect of Annealing Conditions on beta-Ga2O3(2-01) Surface Structures and Properties

27th International Colloquium on Scanning Probe Microscopy

Lugar: Shizuoka; Año: 2019;

OKADA ARIFUMI; CHEN LEI; NAKATANI MASAHIRO; FERREYRA ROMUALDO A.; UEDA DAISUKE; KADONO KOHEI

Effect of surface treatment on the beta-Ga2O3 surface structure

The 14th Kansai Branch Meeting on Ceramic Science and Technologies

Lugar: Kyoto; Año: 2019;

MATSUMURA H.; FERREYRA, ROMUALDO A.; SUZUKI A.; UEDA D.

Stabilization of threshold voltage of GaN MISFET by nitrogen radical irradiation

The 65th JSAP Spring Meeting,of the Japan Society of Applied Physics (JSAP 2018)

Lugar: Waseda; Año: 2018;

NAKATANI MASAHIRO; CHEN LEI; OKADA ARIFUMI; FERREYRA ROMUALDO A.; UEDA DAISUKE; KADONO KOHEI

Changes of property and surface structure of β-Ga2O3 through thermal treatment

The 79th Autumn Meeting of the Japan Society of Applied Physics (JSAP 2018)

Lugar: Nagoya; Año: 2018;

CHEN LEI; OKADA ARIFUMI; FERREYRA ROMUALDO A.; UEDA DAISUKE; KADONO KOHEI

GaN initial growth on β-Ga2O3(¯201) surface studied by scanning tunneling microscopy:some preliminary results

The 65th JSAP Spring Meeting,of the Japan Society of Applied Physics (JSAP 2018)

Lugar: Waseda; Año: 2018;

KAZUMOTO T.; FERREYRA ROMUALDO A.; SUZUKI A.; UEDA D.

GaN selective regrowth by Pico?sec Pulsed Laser Deposition with HSQ mask

Proceedings of the 64th Spring Science Lecture Meeting of the Japan Society of Applied Physics

Lugar: Yokohama; Año: 2017;

SIMUKOVIC A.; MATULIONIS A.; LIBERIS J.; SERMUKSNIS E.; SAKALAS P. ; ZHANG F. ; LEACH J. H. ; AVRUTIN V.; FERREYRA R. A.; MORKOÇ H.

optimum gate bias of GaN Heterostructure Fets

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe

Lugar: Warnemünde,; Año: 2013;

MATULIONIS A.; LIBERIS J.; ARDARAVI IUS L.; ?IMUKOVIC A.; KAYIS C.; ZHU C.; FERREYRA ROMUALDO A.; AVRUTIN V.; OZGUR U.; MORKOÇ H.

Window for better reliability of nitride heterostructure field effect transistors

23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Lugar: Cagliari; Año: 2012;

S. BYCHIKHIN; R. A. FERREYRA

Investigation of nanosecond-time-scale dynamics of electric field distribution and breakdown phenomena in InAlN/GaN TLM structures

18th European Workshop on Heterostructure Technology

Lugar: Ulm; Año: 2009;

R. A. FERREYRA; M. V. D. AHE; H. HARDTDEGEN; N. KALUZA; H. P. BOCHEM; D. GRUETZMACHER

Influence of precursor access on structure and morphology of AlN layers grown by MOVPE

12th European Workshop on Metalorganic Vapour Phase Epitaxy

Lugar: Bratislava, Slovakia; Año: 2007;

JUAN A; FERREYRA R.; GERVASONI J.; GONZALEZ E.; JASEN P.

Estudio del efecto del hidrógeno en la cohesi´on de la estructura cristalina de silicio

90er Reunion Nacional de Física

Lugar: Universidad Nacional de La Plata; Año: 2005;