MAROLI, GABRIEL; OLIVA, ALEJANDRO RAÚL; GAK, JOEL; JULIAN, PEDRO MARCELO; F. PALUMBO

Printed electronics > a low cost alternative to prototyping

2023 Argentine Conference on Electronics (CAE)

Año: 2023;

GIANNETTA, HERNAN; MAROLI, GABRIEL; PAZOS, SEBASTIAN; BOYERAS BALDOMÁ, S.; AGUIRRE, F.; FONTANA, ANDRES; VOLPE, MARÍA ALICIA; OLIVA, ALEJANDRO RAÚL; JULIAN, PEDRO MARCELO; F. PALUMBO

Study of the electrical parameters drift due to mechanical stress in coupled conductors path on flexible polymeric substrate

2022 Argentine Conference on Electronics (CAE)

Año: 2022;

PAZOS, S.; JUAN BAUDINO; MATIAS JOGLAR; AGUIRRE, F.; CARLOS NAVARRO; FELIX PALUMBO

Sensitive Devices and Phase Noise Degradation Mechanisms on all-NMOSFET RF VCO Aging

Argentine Conference on Electronics (CAE).

Año: 2020;

BOYERAS, SANTIAGO; PAZOS, S.; AGUIRRE, F.; HERNAN GIANNETTA; CATHERINE DELGADO; PALUMBO, FELIX ROBERTO

Progressive breakdown on bi-layered gate oxide stacks

34th SBMicro ? Symposium on Microelectronics Technology and Devices

Lugar: Sao Pablo; Año: 2019;

AGUIRRE, F.; ANDREA PADOVANI; ALOK RANJAN; NAGARAJAN RAGHAVAN; NAHUEL VEGA; NAHUEL MÜLLER; MARIO DEBRAY; JOEL MOLINA; KIN LEONG PEY; PALUMBO, FELIX ROBERTO

Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms

2019 IEEE International Reliability Physics Symposium. March 31-April 4, 2019, Monterey, CA, USA.

Año: 2019;

AGUIRRE, F.; PAZOS, S.; F. PALUMBO; FADIDA, S.; R. WINTER; M. EIZENBERG

Impact of forming gas annealing on the degradation dynamics of Ge-Based MOS stacks

2018 IEEE International Reliability Physics Symposium

Lugar: San Francisco; Año: 2018;

LIANG, XIANHU; F. PALUMBO; SHI, YUANYUAN; HUI, FEI; YUAN, BIN; JING, XU; LANZA, MARIO

Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

2018 IEEE International Reliability Physics Symposium

Lugar: San Francisco; Año: 2018;

LUCA LARCHER; ANDREA PADOVANI; DIPANKAR PRAMANIK; BEN KACZER; PALUMBO, FELIX ROBERTO

Defect spectroscopy from electrical measurements: a simulation based technique

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

Año: 2018;

FONTANA, ANDRES; PAZOS, S.; AGUIRRE, F.; NAHUEL VEGA; NAHUEL MÜLLER; DE LA FOURNIERE, EMMANUEL; DEBRAY, MARIO E.; PALUMBO, FELIX ROBERTO

Heavy ion microbeam experimental study of ASET on a full-custom CMOS OpAmp

31st Symposium on Integrated Circuits and Systems Design (SBCCI).

Año: 2018;

XIANHU LIANG; PALUMBO, FELIX ROBERTO; YUANYUAN SHI; HUI, FEI; YUAN, BIN; JING, XU; LANZA, MARIO

Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

2018 IEEE International Reliability Physics Symposium

Año: 2018;

AGUIRRE, F.; PAZOS, S.; F. PALUMBO; I. KRYLOV; MOSHE EIZENBERG

Substrate influence on the behavior of capacitance hysteresis of III-V bilayered MOS stacks

32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017)

Año: 2017;

PAZOS, S.; AGUIRRE, F.; LOMBARDO, S.; E. MIRANDA; F. PALUMBO

Experimental Study of Progressive Breakdown in Different Conductance States of Resistive Switching Structures

China RRAM International Workshop

Lugar: Soochow; Año: 2017;

TANG, KECHAO; F. PALUMBO; DROOPAD, RAVI; MCINTYRE, PAUL C.

Trap characterization and capacitance-voltage hysteresis of Al2O3/InGaAs gate stacks

SISC 2016. 47 th IEEE Semiconductor Interface Specialists Conference

Lugar: San Francisco; Año: 2016;

FELIX PALUMBO; AGUIRRE, F.; PAZOS, S.; R. WINTER; I. KRYLOV; MOSHE EIZENBERG

Trapping and de-trapping effects of border traps in MG/HK/InGaAs stacks

19th Workshop on Dielectrics in Microelectronics

Lugar: Catania; Año: 2016;

FELIX PALUMBO; SALVATORE A. LOMBARDO; MOSHE EIZENBERG

General Features of Progressive Breakdown in Gate Oxides: a Compact Model

International Reliability Physics Symposium IRPS 2015

Año: 2015;

FELIX PALUMBO; P. SHEKHTER; MOSHE EIZENBERG

Role of the interface in the degradation of Metal / Al2O3 / n-InGaAs Capacitors

the 16th Israel Materials Engineering Conference (IMEC-16)

Año: 2014;

FELIX PALUMBO; I. KRYLOV; MOSHE EIZENBERG

Generation of defects in Al2O3/InGaAs stacks under positive bias

WODIM 2014 - 18th Workshop on Dielectrics in Microelectronics

Lugar: Cork; Año: 2014;

SANTIAGO SONDON; PABLO MANDOLESI; FAVIO MASSON; PEDRO JULI´AN; FELIX PALUMBO

A Dual Core Low Power Microcontroller withopen MSP430 Architecture for High Reliability Lock step Applications Using a 180 nm High Voltage Technology Node

LASCAS 2013 - International Symposium of IEEE Circuits and Systems in Latin America

Lugar: Cusco; Año: 2013;

S. FADIDA; FELIX PALUMBO; L. NYNS; H.C. LIN; S.V.ELSHOCHT; M. CAYMAX ; MOSHE EIZENBERG

Correlation between current-voltage measurements and the barrier height determined by XPS in Ge p-MOS capacitors

AVS 2013 (American Vacuum Society)

Año: 2013;

G. HUBERT; R. VELAZCO; C. FREDERICO; A. CHEMINET; C. SILVA-CARDENAS; F. PANCHER; V. LACOSTE; F. PALUMBO; W. MANSOUR; L. ARTOLA; F. PINEDA; S.DUZELLIER

Continuous high-altitude measurements of cosmic ray neutrons and SEU/MCU at various locations: correlation and analyses based-on MUSCA SEP3

RADECS 2012, Radiation and its Effects on Components and Systems

Lugar: Biarritz; Año: 2012;

FELIX PALUMBO; C. QUINTEROS; F. CAMPABADAL; J.M. RAFÍ; M. ZABALA; E. MIRANDA

Soft Breakdown in Irradiated High-K Nanolaminates

INFOS 2011, 17th Conference on "Insulating Films on Semiconductors"

Lugar: Grenoble; Año: 2011;

C. QUINTEROS; L. SAMBUCO; E. REDIN; A. FAIGON; FELIX PALUMBO; F. CAMPABADAL

Comparative analysis of MOS capacitive structures with high-K dielectrics under gamma, 16O and p radiation

RADECS 2011, 12th European Conference on Radiation and Its Effects on Components and Systems.

Lugar: Sevilla; Año: 2011;

FELIX PALUMBO; E. MIRANDA

Modeling of the Tunneling Current in MOS Devices after Proton Irradiation Using a Nonlinear Series Resistance Correction

RADECS 2010, 11th European Conference on Radiation and Its Effects on Components and Systems

Año: 2010;

FELIX PALUMBO; E. MIRANDA

Effect of the impact of high-energy protons on the I-V characteristics of MOS structures

ICCCD 2010, International Conference on Communication, Computers and Devices

Lugar: Kharagpur; Año: 2010;

FELIX PALUMBO

Progressive Breakdown: Structure of the Oxide Damage and Reliability Projection

1st International Workshop on Semiconductor Devices Modeling and Electronic Materials and IEEE EDS 2010

Lugar: La Plata, buenos Aires; Año: 2010;

SANTIAGO SONDON; FELIX PALUMBO; PABLO MANDOLESI; PEDRO JULIAN; MARTIN ALURRALDE; A. FILEVICH

Radiation Damage Characterization of Digital Integrated Circuits

10th IEEE Latin American Test Workshop (LATW 2009)

Lugar: Buzios, Brazil; Año: 2009;

SANTIAGO SONDON; FELIX PALUMBO; PABLO MANDOLESI; PEDRO JULIAN; MARTIN ALURRALDE; A. FILEVICH

Radiation Damage of High Voltage MOS Transistors Induced by 10 MeV Protons

XV Workshop Iberchip

Lugar: Buenos Aires; Año: 2009;

LOZANO A.; PALUMBO, FELIX; M. ALURRALDE

Radiation Effects on SOI Electrostatic Comb Drive Actuators of MEMS Devices

Escuela Argentina de Microelectronica Tecnologia y Aplicaciones EAMTA

Lugar: Instituto Balseiro, Bariloche, Argentina; Año: 2009;

FELIX PALUMBO; A. FAIGON; I. PRARIO; GIUSEPPE CURRO; C. NIGRI; ALESSANDRA CASCIO; M. ALURRALDE; A. FILEVICH

Proton and Gamma Irradiation in double-diffused metal-oxidesemiconductor

First International Workshop on Dependable Circuit Design (DECIDE 2007)

Lugar: Buenos Aires; Año: 2007;

M. ALURRALDE; M. BARRERA; C.G. BOLZI; C.J. BRUNO; P. CABOT; E. CARELLA; J. DI SANTO; J. DURÁN; J. FERNÁNDEZ; A. FILEVICH; C.D. FRANCIULLI; E.M. GODFRIN; V. GOLDBECK; A. IGLESIAS; M.G. MARTÍNEZ BOGADO; E. MEZZABOLTA; A. MOGLIONI; C. NIGRI; S.L. NIGRO; FELIX PALUMBO; J. PLA; I. PRARIO; M.C. RAFFO CALDERÓN; H. SOCOLOVSKY; M.J.L. TAMASI; A. VERTANESSIAN

DESARROLLO, FABRICACIÓN Y ENSAYO DE PANELES SOLARES PARA LAS MISIONES SATELITALES SAOCOM Y SAC-D

XXXIV Reunión Anual de la Asociación Argentina de Tecnología Nuclear

Lugar: Buenos Aires; Año: 2007;

FELIX PALUMBO; GIOVANNI CONDORELLI; SALVATORE A. LOMBARDO

Analysis of the Breakdown Mode in Ultra-Thin Gates Oxides

92a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: Salta, Argentina; Año: 2007;

M. ALURRALDE; M. BARRERA; C.G. BOLZI; C.J. BRUNO; P. CABOT; E. CARELLA; J. DI SANTO; J.C. DURÁN; J. FERNÁNDEZ; A. FILEVICH; C.D. FRANCIULLI; E.M. GODFRIN; V. GOLDBECK; A. IGLESIAS; M.G. MARTÍNEZ BOGADO; E. MEZZABOLTA; A. MOGLIONI; C. NIGRI; S.L. NIGRO; FELIX PALUMBO; J. PLA; I. PRARIO; M.C. RAFFO CALDERÓN; E. RODRÍGUEZ; H. SOCOLOVSKY; M.J.L. TAMASI; A. VERTANESSIAN

ADVANCES IN THE DEVELOPMENT OF PHOTOVOLTAICS FOR SPACE APPLICATIONS IN ARGENTINA

22nd European Photovoltaic Solar Energy Conference,

Lugar: Milan, Italia; Año: 2007;

M. ALURRALDE; J. DURÁN; A. FILEVICH; C. NIGRI; I. PRARIO; FELIX PALUMBO; G.E. SAGER; R. VELAZCO; A. VERTANESSIAN

A Radiation Damage Test Facility at Tandar

7th IEEE Latin-American Test Workshop (LATW 2006)

Lugar: Buenos Aires; Año: 2006;

FELIX PALUMBO; ADRIAN N. FAIGON; GIUSEPPE CURRO; IGOR PRARIO; ALESSANDRA CASCIO

Electrical Stress and Gamma Irradiation of MOS transistors

7th IEEE Latin-American Test Workshop (LATW 2006)

Lugar: Buenos Aires; Año: 2006;

FELIX PALUMBO; ROBERTO PAGANO; SALVATORE A. LOMBARDO; S.A. KRISHNAN; C. YOUNG; R. CHOI; G. BERSUKER; P. KIRSCH; JAMES H. STATHIS

Evidence of progressive breakdown in high-k metal gate nFETs

3rd International Symposium on Advanced Gate Stack Technology (ISAGST)

Lugar: Austin Texas, USA; Año: 2006;

G. SAGER; M. ALURRALDE; I. PRARIO; FELIX PALUMBO; A. FILEVICH; A. VERTANESSIAN; R. VELAZCO; P. FERREYRA

TANDAR as a Digital Circuits Test Radiation Facility

7th IEEE Latin-American Test Workshop (LATW 2006)

Lugar: Buenos Aires; Año: 2006;

SALVATORE A. LOMBARDO; FELIX PALUMBO; GIOVANNI CONDORELLI

Progressive breakdown in ultrathin gate oxides

208th The Electrochemical Society (ECS) Meeting

Lugar: Los Angeles, California; Año: 2006;

FELIX PALUMBO; SALVATORE A. LOMBARDO; KIN LEONG PEY; LEI JUN TANG; CHIH HANG TUNG; WEN HE LIN; M. K. RADHAKRISHNAN; G. FALCI

Structure of the Breakdown Spot During Progressive Breakdown of Ultra-Thin Gate Oxides

IEEE International Reliability Physics Symposium

Lugar: Phoenix, AZ, USA; Año: 2004;

FELIX PALUMBO; SALVATORE A. LOMBARDO; JAMES H. STATHIS; V. NARAYANAN; F.R. MCFEELY; J.J. YURKAS

Degradation of Ultra-Thin Oxides with Tungsten Gates under High Voltage: Wear-out and Breakdown Transient

IEEE International Reliability Physics Symposium

Lugar: Phoenix, AZ, USA; Año: 2004;

KIN LEONG PEY; CHIH HANG TUNG; LEI JUN TANG; M. K. RADHAKRISHNAN; WEN HE LIN; SALVATORE A. LOMBARDO; FELIX PALUMBO

Structural analysis of breakdown in ultra thin gate dielectric using trnsmission electron microscopy

International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)

Lugar: Hsinchu, Taiwan; Año: 2004;

S. YUAN; KIN LEONG PEY; CHIH HANG TUNG; SALVATORE A. LOMBARDO; FELIX PALUMBO; LEI JUN TANG; M. K. RADHAKRISHNAN

Geometry Dependence of Gate Oxide Breakdown Evolution

International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)

Lugar: Hsinchu, Taiwan; Año: 2004;

SALVATORE A. LOMBARDO; FELIX PALUMBO; JAMES H. STATHIS; BARRY P. LINDER; KIN LEONG PEY; CHIH HANG TUNG

Breakdown transients in ultra-thin gate oxynitrides

International Conference on Integrated Circuit Design and Technology, 2004. ICICDT '04.

Lugar: Austin, TX, USA; Año: 2004;

FELIX PALUMBO; A. FAIGON; D. RUS

Analisis de la corriente de substrato en transistores MOS en configuracion de diodo controlado

87a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: Cordoba; Año: 2002;

G. REDIN; FELIX PALUMBO; A. FAIGON

Sensor dosimetrico MOS de radiacion gamma borrable electricamente

87a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: Cordoba; Año: 2002;

ADRIAN N. FAIGON; FELIX PALUMBO; RINA LOMBARDI; EDUARDO G.. REDIN

Correlation between Positive Charge and Interface States in Gamma Irradiated MOS Transistors. On the Applicability of Hypothesis.

6th European Conference on Radiation and Its Effects on Components and Systems, (RADECS)

Lugar: Grenoble, France; Año: 2001;

FELIX PALUMBO; R. LOMBARDI; G. REDIN; A. FAIGON

Generacion y Recombinacion de Portadores en Transistores MOSFET irradiados con 60Co

Reunion del Grupo Montevideo (AUGM)

Lugar: San Carlos, Brazil; Año: 2000;

FELIX PALUMBO; R. LOMBARDI; G. REDIN; A. FAIGON

Efectos de la Radiacion sobre la Generacion Superficial en Gate Controlled de Silicio

85a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: Buenos Aires; Año: 2000;

FELIX PALUMBO; R. LOMBARDI; G. REDIN; A. FAIGON

Measurements of Radiation using gate controlled diodes

IberoAmerican Conference on Sensors

Lugar: Buenos Aires; Año: 2000;

R. LOMBARDI; FELIX PALUMBO; G. REDIN; A. FAIGON

Carga Positiva y Estados de Interfaz en Estructuras MOS Irradiadas Gamma

Reunion del Grupo Montevideo (AUGM)

Lugar: Curitiba, Brasil; Año: 1999;

R. LOMBARDI; FELIX PALUMBO; G. REDIN; A. FAIGON

Carga Positiva y Estados de Interfaz en Estructuras MOS Irradiadas Gamma

84a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: San Miguel de Tucuman; Año: 1999;

R. LOMBARDI; G. REDIN; A. VERCIK; FELIX PALUMBO; ADRIAN N. FAIGON

Efectos de la Radiacion Gamma sobre dispositivos MOSFET Irradiados con 60Co

83a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: La Plata, Buenos Aires; Año: 1998;

ADRIAN N. FAIGON; G. REDIN; R. LOMBARDI; FELIX PALUMBO; A. BOSCHAN

Daños por radiacion en dispositivos MOS

Reunion del Grupo Montevideo (AUGM)

Lugar: Santa Fe; Año: 1998;

F. KARLES; FELIX PALUMBO; Y. CESA; N. MINGOLO; O. MARTINEZ; H DE ROSA

Tratamientos de Superficies con un Haz de electrones: efectos de la configuracion del cañon en la microestructura

Reunion de la Asociación Argentina de Materiales-SAM

Lugar: Rosario, Santa Fe; Año: 1998;

R. LOMBARDI; G. REDIN; A. VERCIK; FELIX PALUMBO; A. FAIGON

Determinacion de Creacion de Estados Superficiales Rapidos en MOSFET irradiados con 60Co.

Brazilian Council of Engineering and Materials Sciences

Lugar: Curitiba, Brasil; Año: 1998;

F. KARLES; FELIX PALUMBO; Y. CESA; N. MINGOLO; O. MARTINEZ; H DE ROSA

Estabilidad de la Focalizacion de un Cañonm de Electrones para el Tratamiento de Superficies

82a Reunion Nacional de Fisica. Asociacion Fisica Argentina

Lugar: San Luis; Año: 1997;