Domain walls in oxide thin films for neuromorphic computing

SALVERDA, MART; D RUBI; S. FAROKHIPOOR; B NOHEDA

Congreso; Physics@Veldhoven 2018; 2018

Ferroelastic domain walls in BiFeO3 thin films are more conducting than the domains. One proposed origin is that oxygen vacancies tend to accumulate at the domain walls due to strain gradients, which reduces the Schottky barrier at the interface with the electrode. So far, conductivity has been measured across the film thickness (locally by conductive AFM) and also laterally in parallel as-grown and written domain walls (by macroscopic resistance measurements). It has also been shown that domain walls, when probed between top and bottom electrodes (across the film thickness), can show memristive behaviour.In this work, we investigate the in-plane electrical properties in different length scales of as-grown networks of domain walls in different oxide thin films. Our aim is to elucidate the nature of conductivity in these domain walls and to investigate the ?electrical plasticity? and connectivity of domain wall networks in order to explore their application in neuromorphic computing.