INVESTIGADORES
CARBONETTO SebastiÁn Horacio
congresos y reuniones científicas
Título:
Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 μm CMOS process
Autor/es:
CARBONETTO, S.; ECHARRI, M.; LIPOVETZKY, J.; GARCIA-INZA, M.; FAIGON, A.
Lugar:
San Antonio, TX
Reunión:
Conferencia; Nuclear and Space Radiation Effects Conference; 2019
Institución organizadora:
IEEE
Resumen:
We present a differential dosimeter based on the mismatch of two identical FOXFETs. The sensor was fabricated in a high-voltage 0.35 μm CMOS process, and it was characterized regarding its response to radiationand temperature.
