Bipolar resistive switching in binary oxides based memory cells,

M. J. SÁNCHEZ

Buenos Aires

Workshop; EPICO 2012; 2012

I shall review the main ingredients and findings of the Voltage Enhanced Oxygen Vacancy (VEOV) model [1,2,3], originally introduced to explain the microscopic origin of BRS in complex oxide-based memory cells.In particular I will discuss how it can be adapted to account for BRS in binary oxides cells.I will show numerical results that qualitatively reproduce nontrivial resistance hysteresis experiments on Au/TiO2 /Al cells [4].[1] M. Rozenberg, M. J. Sánchez, R. Weht, C. Acha, F. G. Marlasca and P. Levy, Phys. Rev. B 81,115101 (2010).[2] N. Ghenzi, M. J. Sánchez, F. G. Marlasca, P. Levy and M. Rozenberg, J. Appl. Phys. 107, 093719(2010).[3] N. Ghenzi, M. J. Sánchez, M. J. Rozenberg, P. Stoliar, F. G. Marlasca, D. Rubi, and P. Levy J. Appl.Phys 111, 084512 (2012).[4] N. Ghenzi, M. J. Sánchez and P. Levy, in preparation.