Modeling and simulation of memristive devices using Verilog-A

N. CAROLI; F. GOLMAR; F. DI FRANCESCO; G. A. SANCA; M. BARELLA

Mar del Plata

Conferencia; 1st Argentine Conference on Electronics (CAE); 2019

UNMDP-CONICET

Accurate and predictive models of memristive devices are needed to enable the design and simulation of a wide variety of applications in which memristors can be used, such as RRAM memory (Resistive Random Access Memory), digital and analog circuits, neuromorphic systems, among others. In this work, an overview of the generalized diode model for resistive switching and its mathematical expressions are presented. We also present and discuss the Verilog-A implementation of the model. Simulations using Mentor Graphics ELDO were performed. Current-to-voltage (I-V) characteristics of the modeled memristor were compared with our experimental data. I-V curves of TiO2-based resistive switching devices were fitted with the presented model.