Insights on the Magnetic Interactions of a MnGaN Surface Structure

SEVERINO, RAMIRO; YINGQUIAO , MA; ABHIJIT V. CHINCHORE; ARTHUR R. SMITH; MARÍA ANDREA BARRAL; VALERIA FERRARI

San Carlos de Bariloche

Congreso; XXV Simposio Latinoamericano de Física del Estado Sólido (SLAFES); 2018

CNEA-MINCyT

A model spintronic semiconductor system makes use of the room temperature spin injection from a ferromagnetic material into a semiconductor material in order to achieve desirable effects such as spin-polarized transport and spin information transfer. In 2006 it was reported that growth of MnGa onto Ga-polar wurtzite showed ferromagnetic behavior. In 2013, it was found that depositing Mn atoms on a N-polar wurtzite GaN structure lead to a stable 2D structure, namely MnGaN-2D. Models bsaed on first principles calculations showed that Mn atoms substitute Ga atoms on the surface. Here, we show the controlled construction of a MnGaN-2D surface structure and the existence of magnetic domains at room temperature, supported by first principles calculations. This makes MnGaN-2D a strong candidate for use in technological applications.