Optical investigation of damage profile in proton-irradiated III-V compounds

E. YACCUZZI1; M. REINOSO; S. SUAREZ; S. KHACHADORIAN4; A. HOFFMANN; A. STRITTMATTER; P. GIUDICI

Helsinki

Conferencia; Internation Conference on Defects in Semiconductors; 2015

Aalto University

Multijunctionsolar cells based on InGaP2 and GaAs materials are currently the state of art for space applications due to the large efficiency achieved, nowadays 30% for InGaP2/GaAs/Ge triple junction solar cells. However, the space is a hazardous environment and the different energetic particles found in it can degrade the solar cell efficiency and hence, the life time of the satellite. Much effort was done trying to understand and predict the electrical parameters degradation of solar cells [1-2], doing experiments as well as by means of simulation software. For heavy and light ions projectiles the most used program is the SRIM code [3]. This software can calculates, for instance, the penetration range and the number of vacancies generated for ions in different target materials and semiconductors.