Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors

SAMBUCO SALOMONE, L.; CAMPABADAL, F.; FERNANDEZ, M.; LIPOVETZKY, J.; CARBONETTO, S.; GARCIA INZA, M.; REDIN, E. G.; FAIGON, A.

Córdoba

Conferencia; 6th Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA), 2012; 2012

We studied the trapping/detrapping processes in MOS capacitors with an Atomic Layer Deposited (ALD) Al2O3/HfO2/Al2O3/HfO2/Al2O3 stack as insulating layer for both types of substrates, regarding its use as a component of Charge-Trapping nonvolatile memory (CT-NVM). Relevant information about trapping/detrapping processes was obtained through constant capacitance voltage transient (CCVT) technique.