Ionizing radiation differential sensor based on thick gate oxide MOS transistors

CARRÁ, M.J.; GARCÍA INZA, M. A.; LIPOVETZKY, J.; CARBONETTO, S.; REDIN, E.; SAMBUCO SALOMONE, L.; FAIGON, A.

Conferencia; 7th Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA), 2013; 2013

This work presents a differential MOS circuit for ionizing radiation dose estimation. Thick gate oxide n-MOS transistors are used as the sensing pair, with p-MOS load to enhance the radiation response. The circuit is analyzed and tested under gamma (60Co) radiation. Results show a radiation sensitivity increase up to 8 V/Gy and an improved thermal drift rejection ratio in comparison with a single n-MOS dosimeter.