Study of the magnetic properties on Mn and As co-implanted GaAs

DE BIASI EMILIO; PUDENZI MARCIO; BEHAR M.; CARVASAND F.; KNOBEL MARCELO

Río de Janeiro, Brasil

Congreso; LAW3M 2007; 2007

  The interest on diluted magnetic semiconductor (DMS), like GaMnAs, has increased during the last years due to the potential applications, mainly on spintronic device. The magnetic anisotropy and the interacting effects between the magnetic nanostructures are fundamental topics to be studied. In this work we present some results on Mn and As co-implanted GaAs. Samples with three different implantation energies of Mn were prepared, keeping the As implantation energy fixed and the Mn and As dose of 2x1016 cm-2. Annealing was done using rapid thermal annealing (RTA) at 750°C for 20 and 50s. Using a Superconducting Quantum Interference Device (SQUID) and magnetic anisotropy values reported in the literature, we have obtained information about nanocluster size distribution. Our studies indicated that the nanoclusters size distribution depends on the implantation parameters and the annealing time.     Differently from previous studies reported in similar samples, we have observed room temperature hysteresis in all samples, with coercive field values typical of nanoparticles systems.