Substrate influence in the barrier quality of multiferroic tunnel junctions, model and experiments

M. SIRENA

Gramado

Congreso; X Brazilian MRS Meeting; 2010

Brazilian Materials Research Society

In this work a phenomenological approach is proposed to analyze the electrical transport through an insulating barrier in ferromagnetic (FM)/ferroelectric (FE) bilayers, using conductive atomic force microscopy (CAFM). We have found that I(V) = A0 . V a , where A0 and a depend linearly with the barrier thickness. The influence of the substrate in the electrical properties of the FE/FM bilayers was studied in the frame of this model. MGO substrates with higher roughness were found to increase the barrier height distribution and increase the attenuation length in the material, reducing the barrier quality for the developing of multiferroic tunnel junctions.