The bulk Band structure and Inner Potential of layered In4Se3

J. LIU, Y.B. LOSOVYJ, T. KOMESU, P.A. DOWBEN, L. MAKINISTIAN, E. A. ALBANESI, A. G. PETUKHOV, P. GALIY, Y. FIYALA

Lincoln, NE, USA, October 6, 2007.

Conferencia; 54th Midwest Solid State Conference,; 2007

University of Nebraska, Lincoln, USA

Poster: The electronic structure of the layered In4Se3 system was studied by angled-resolved photoemission (ARPES). Both bulk and surface features were identified through photon energy depemndent ARPES. The surface state dispersions were measured in Gamma-->X and Gamma-->Y directions. Bands widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region with changing photon energy, and is indicative of a bulk band structure perpendicular to the cleavage plane. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure. The cleavage surface are ordered with the critical points consistent with LEED.