Oxides for non volatile memory devices: The MeMOSat Project

P. LEVY; F. GOLMAR; D. RUBI; C. ACHA

Bariloche

Workshop; SERESSA 2014; 2014

CAB-CNEA

The MeMOSat Project1 is a consortium aimed at producing non-volatile memory devices to work in aggressive environments. Our devices rely on the Resistive Switching mechanism, which produces a change in the electrical resistance across a metal-insulator-metal structure. A review of MeMOSat?s activities is presented, covering the initial Proof of Concept in ceramic millimeter sized samples; the study of different oxide-metal couples, including (LaPr) 2/3Ca1/3MnO, La2/3Ca1/3MnO3, La1/3Ca2/3MnO3, YBa2Cu3O7, TiO2, HfO2, MgO and CuO; and recent miniaturized arrays of micrometer sized devices controlled by in-house designed electronics, which were launched with the BugSat01 satellite by Satellogic2, in June 2014. The MeMOSat-01 platform is the initial step of the LaboSat Project3, a versatile electronic platform to perform experiments in low earth orbit.