INVESTIGADORES
LIPOVETZKY Jose
congresos y reuniones científicas
Título:
Radiation response of Al2O3-based MOS capacitors under different bias conditions
Autor/es:
SALOMONE, L.SAMBUCO; KASULIN, A.; LIPOVETZKY, J.; CARBONETTO, S.H.; INZA, M.A.GARCIA; REDIN, E.G.; BERBEGLIA, F.; CAMPABADAL, F.; FAIGON, A.
Lugar:
Buenos Aires
Reunión:
Conferencia; Micro-Nanoelectronics, Technology and Applications (EAMTA), 2013 7th Argentine School of; 2013
Institución organizadora:
UTN FRBA
Resumen:
We present for the first time real-time γ-ray (60Co)
radiation response of MOS capacitors with an atomic layer
deposited Al2O3 as insulating layer under different bias
conditions. Preirradiation electrical characterization showed
voltage instability due to tunneling transitions between the
substrate and preexisting defects inside the dielectric layer. Real-
time capacitance-voltage (C-V) measurements along irradiation
showed two distinguishable regions: For short times, the response
is strongly bias dependent (positive voltage shift for positive bias
and the opposite for negative bias) with a shape linear with log(t),
while for long times the voltage shift is always negative with a
linear dependence with dose. This behavior can be explained and
reproduced by a physical model that takes into account the
superposition of a bias-induced electron trapping/detrapping by
tunneling transitions with the substrate (as without radiation)
and a radiation-induced hole capture.