INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Electrical properties of TCO-coated macroporous silicon structures
Autor/es:
F.A. GARCÉS; L.N. ACQUAROLI; R. URTEAGA; R.R. KOROPECKI; R. D. ARCE
Lugar:
Málaga
Reunión:
Conferencia; 8th International Conference on Porous Semiconductors Science and Technology; 2012
Resumen:
In this work
we present the electrical characterization of a semiconductor (Porous Silicon)
PS/TCO (Transparent Conductor Oxide) junction obtained by the deposition of SnO2
onto macroporous silicon, using the spray pyrolysis technique. The Porous Silicon
(SP) was prepared by the electrochemical anodization of a silicon wafer. The anodization
conditions were chosen so as to produce pore sizes ranging in 0.8 to 1 μm
diameter. The transport of charge carriers through the interface was studied by
measuring the current-voltage curves in dark and under illumination. The SnO2
was doped with fluorine. We analyzed the effects of the illumination on the
electrical properties of the junction. We suggest a model of two opposing diodes,
each one associated with an independent current source. Scanning electronic
microscopy were performed in order to confirm the pore filling and the surface
coverage.