Increase in tunnel effect magnetoresistance for a pseudo-spin valve using an electric field

J.A. ZÚÑIGA; A.V. GIL REBAZA

Rosario

Congreso; IX Reunión Nacional de Sólidos - SOLIDOS 2023; 2023

Theoretical analyzes on spin transport are supported by the heterostructures made up of two diluted magnetic semiconductors (DMS) and ferromagnetic semiconductors (FMS) separated by a nonmag-netic semiconductor (SC) barrier. This work considers the angular dependence of the magnetization vectors through the internal exchange energy [1] in the DMS [2] or FMS [3, 4] and the spin-orbit coupling (SOC) effect on the barrier. Based on parabolic valence band effective mass approximation and spontaneous magnetization of DMS o FMS electrodes, we have obtained an analytical expression of the angulardependence of transmission for the initial state of the magnetization vector fixed to θo = 0, π/4. For the singular case of θo = 0, our results are in agremment with previous studies with [5] and without [6] electric field. We also examine the dependence of spin polarization and tunnelingmagnetoresistance (TMR) function with the barrier thickness, electric field and the relative angle between the magnetizations of two DMS or FMS layers, in the heterostructures GaMnAs/GaAs/GaMnAs [5] InFeAs/InAs/InFeAs [4] and GaFeSb/InAs/GaFeSb [3]. Our calculations explain the main features of experimental observations [3, 7]. The results can be applied to new heterostructures used in spintronic devices such as spin valves.