INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
KINETICS OF ELECTRON INDUCED DESORPTION OF HYDROGEN IN NANOSTRUCTURED POROUS SILICON
Autor/es:
G.D. RUANO; J. FERRON; R.D. ARCE ; R.R. KOROPECKI
Lugar:
Valencia
Reunión:
Conferencia; PSST-2010, Porous Semiconductors - Science and Technology, 7th International Conference; 2010
Institución organizadora:
EM-Silicon Nano-Technologies S.L.
Resumen:
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We have found that the electron bombardment
of nanostructured porous silicon induces hydrogen desorption. The kinetics of
the electron induced effusion can be explained neither in terms of thermal
processes nor by direct transference of energy from the impinging electron to
the Si-H bonds. We show that short
lived-large energy flucuations (SLEFs), occurring during bimolecular
recombination processes of carriers produces both, a midgap increment of the
density of electronic defect states, and hydrogen desorption.
