Multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3-x perovskite

ROMÁN ACEVEDO, WILSON; AGUIRRE, MYRIAM H.; CRISTIAN FERREYRA; JOSÉ SÁNCHEZ, MARÍA; MIGUEL RENGIFO; C. VAN DEN BOSCH; A. AGUADERO; B NOHEDA; D RUBI

Virtual

Congreso; European Materials Research Society Meeting; 2022

In our information society, the use of Machine Learning (ML) algorithms is exponentially growing and concerns are being raised about their energetic sustainability. The Von Neumann architecture of current computers is highly inefficient for the processing of large amounts of data and, thus, the development of new hardware able to do parallel processing as well as to overcome the von-Neuman bottleneck is needed to perform complex tasks such as computer vision or speech recognition more efficiently, reducing the associated carbon footprint. Neuromorphic computing –which aims to imitate the architecture and the information processing mechanisms of the human brain- appears as one of the promising avenues in this direction. Oxide-based memristors –able to change their resistance between different states- mimic the analog synaptic weights of biological synapses and could form the building blocks for the development of future neuromorphic hardware. Some memristive systems display additional functionalities such as memcapacitance –change of a device capacitance between different non-volatile states- and could significantly outperform memristors in bio-inspired devices; indeed, it has been proposed that a neural network based on memcapacitors can improve the energy consumption of a memristor-based network by a factor 103 [1].Perovskite oxides that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. We have previously shown that topotactic redox La1/2Sr1/2Mn1/2Co1/2O3-x (LSMCO) thin films grown on Nb:SrTiO3 (NSTO) display multi-mem (memristive and memcapacitive) properties [2]. The observed behaviour originates at a switchable n-p diode formed at the NSTO/LSMCO interface and the measured memcapacitance is a factor of 10 larger than the best reported to date [2].