Spin rectification by planar Hall effect in synthetic antiferromagnets

D. E. GONZALEZ-CHAVEZ; M. A. PERVEZ; JAVIER E. GÓMEZ; A. BUTERA; L. AVILÉS-FÉLIX; R. L. SOMMER

Bariloche

Workshop; International workshop on Spintronics 2022; 2022

Centro Atómico Bariloche

Electrically detected ferromagnetic resonance signals are originated by the radiofrequency electric field, the spin currents induced by the excitation fields, and their interaction with the ferromagnetic material or adjacent nonmagnetic layers. In this work, we study spin rectification effects in NiFe/Ru/NiFe/NM synthetic antiferromagnets at the saturated, non-collinear and antiparallel magnetic states. The change in the magnetization orientation at these states allows us to study the angle dependence of spin rectification phenomena by only changing the applied field [1]. This approach avoids the need of changing the sample orientation within the experiment for this kind of studies. Our results show large planar Hall effect contributions to the measured spin rectified voltage with interesting features in the non-collinear and antiparallel states, which bring new possibilities for device design and applications. The results improve the understanding of electrically detected ferromagnetic resonance signals, not only for synthetic antiferromagnets, but also for other samples where the signals coming from the anisotropic magneto resistance effect and the inverse spin Hall effect are superimposed.Figure 1: Measured DC voltages vs Magnetic field, along all the magnetization states, for a Ru/NiFe/Ru(0.8 nm)/NiFe/Ta. The dashed lines correspond to the dispersion relations of the acoustic FMR mode.References[1] M. A. Pervez, D. Gonzalez-Chavez, R. Dutra, B. Silva, S. Raza, R. Sommer “Damping in synthetic antiferromagnets” J. Magn. Magn. Mater. 548 168923 (2022)