Spin transport for a trilayer heterostructure with electric field: Influence of the magnetization vector in-plane of the barrier

J.A. ZÚÑIGA; A.V. GIL REBAZA

Bariloche

Conferencia; 107° Reunión de la Asociación Física Argentina - 107 RAFA; 2022

Theoretical analyzes on spin transport are supported by the heterostructures made up of twodiluted magnetic semiconductors (DMS) or ferromagnetic semiconductors (FMS) separatedby a nonmagnetic semiconductor (SC) barrier. This work considers the angular dependenceof the magnetization vectors through the internal exchange energy [1] in the DMS [2] orFMS [3,4] and the spin-orbit coupling (SOC) effect on the barrier. Based on parabolicvalence band effective mass approximation and spontaneous magnetization of DMS orFMS electrodes, we have obtained an analytical expression of the angular dependenceof transmission for the initial state of the magnetization vector fixed to θ0={0,π4,π2}allowing us study the SOC Dresselhaus and Rashba. For the singular case of θ0= 0, our results are in agremment with previous studies with [5] and without [6] electric field.We also examine the dependence of spin polarization and tunneling magnetoresistance(TMR) function with the barrier thickness, temperature and the relative angle between themagnetizations of two DMS or FMS layers, in the heterostructures GaMnAs/GaAs/GaMnAsand InFeAs/InAs/InFeAs. Our calculations explain the main features of experimentalobservations [5,7]. The results can be applied to new heterostructures used in spintronicdevices such as spin valves