I. VAQUILA; I.L. BOLOTIN; T. ITO; B.N. MAKARENKO; J.W. RABALAIS

Ion fraction map of He+ scattered on Si(100) )-(2x1)

SURFACE SCIENCE; Lugar: Amsterdam; Año: 2002 vol. 496 p. 187 - 195

I. VAQUILA; J.W. RABALAIS; J. WOLFGANG; P. NORDLANDER

Doping dependence of electronic charge transfer on Si(100)

SURFACE SCIENCE; Lugar: Amsterdam; Año: 2001 vol. 489 p. 561 - 567

I. VAQUILA; K.M. LUI; J.W. RABALAIS; J. WOLFGANG; P. NORDLANDER

Surface Structure and Electron Density Dependence of Scattered Ne+ Ion Fractions From the Si(100)-(2x1)

SURFACE SCIENCE; Lugar: Amsterdam; Año: 2001 vol. 470 p. 255 - 264

M. ZAPPONI; J. L. ZUBIMENDI; J. VON BERGEN; I. VAQUILA; M.C.G. PASSEGGI (H); J. FERRÓN

Hot Dip Galvanized Steel Darkening and Chemical Composition of the Surface

PLATING AND SURFACE FINISHING; Año: 1999 vol. 86 p. 80 - 82

I. VAQUILA; L.I. VERGARA; M.C.G. PASSEGGI (H); R. VIDAL; J. FERRÓN

Chemical reactions at surfaces: Titanium oxidation

SURFACE AND COATINGS TECHNOLOGY; Lugar: Amsterdam; Año: 1999 vol. 122 p. 67 - 71

L.I. VERGARA; I. VAQUILA; J. FERRÓN

Titanium oxide reduction in ion depth profiling

APPLIED SURFACE SCIENCE; Lugar: Amsterdam; Año: 1999 vol. 151 p. 129 - 138

M.C.G. PASSEGGI (H); I. VAQUILA; J. FERRÓN

Auger electron spectroscopy analysis of the first stages of thermally stimulated oxidation of GaAs(100)

APPLIED SURFACE SCIENCE; Lugar: Amsterdam; Año: 1998 vol. 133 p. 65 - 72

I. VAQUILA; M.C.G. PASSEGGI (H); J. FERRÓN

The oxidation process in titanium thin films

PHYSICAL REVIEW B; Lugar: New York; Año: 1997 vol. 55 p. 13925 - 13931

I. VAQUILA; J. FERRÓN

Chemical effects in preferential sputtering

AMERICAN INSTITUTE OF PHYSICS; Lugar: Woodbury-New York; Año: 1996 vol. 378 p. 89 - 93

S. CONCARI; I. VAQUILA; R. R. KOROPECKI; J. FERRÓN

FIRST STAGES OF OXIDATION OF YB THIN-FILMS - AN AUGER-SPECTROSCOPY STUDY

Journal of the Argentine Chemical Society; Lugar: Buenos Aires; Año: 1996 vol. 84 p. 185 - 190

I. VAQUILA; M.C.G. PASSEGGI (H); J. FERRÓN

Temperature Effect in the Early Stages of Titanium Oxidation

APPLIED SURFACE SCIENCE; Lugar: Amsterdam; Año: 1996 vol. 93 p. 247 - 253

M.C.G. PASSEGGI (H); I. VAQUILA; R. VIDAL; J. FERRÓN

Chemical reactivity of alkalisemiconductor interfaces. The case of K/GaAs(110) and K/Si(100) interfaces

SURFACE SCIENCE; Lugar: Amsterdam; Año: 1996 vol. 355 p. 100 - 108

M.C.G. PASSEGGI (H); I. VAQUILA; S.J.SFERCO

Theoretical analysis of the electronic structure of pure and hydrated forms of As2O5

PHYSICAL REVIEW B; Lugar: New York; Año: 1994 vol. 50 p. 2090 - 2094

M.C.G. PASSEGGI (H); I. VAQUILA; J. FERRÓN

The oxidation of GaAs(100) studied by Auger Electron Spectroscopy and Principal Component Analysis

JOURNAL OF PHYSICS CONDENSED MATTER; Lugar: Londres; Año: 1993 vol. 5 p. 155 - 156

I. VAQUILA; M.C.G. PASSEGGI (H); J. FERRÓN

Oxide Stoichiometry in the Early Stages of Titanium oxidation at low pressure

JOURNAL OF PHYSICS CONDENSED MATTER; Lugar: Londres; Año: 1993 vol. 5 p. 157 - 158

M.C.G. PASSEGGI (H); I. VAQUILA; J. FERRÓN

Auger electron spectroscopy and principal component analysis of the first stages of oxidation in GaAs(100)

SURFACE AND INTERFACE ANALYSIS; Lugar: LOndres; Año: 1993 vol. 20 p. 761 - 765

I. VAQUILA; M.C.G. PASSEGGI (H); J. FERRÓN

Oxide stoichiometry in the early stages of titanium oxidation

SURFACE SCIENCE; Lugar: Amsterdam; Año: 1993 vol. 292 p. 795 - 800