EGUCHI, KOHKI; SUEHIRO, YUDAI; TABATA, YUTO; FERREYRA, ROMUALDO A.; TSUTSUMI, TAKUYA; OHNO, YASUO; HIGASHIWAKI, MASATAKA

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THOMAS, GIULIANO; FERREYRA, ROMUALDO ALEJANDRO; QUIROGA, MATIAS A.

Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model

APPLIED SURFACE SCIENCE; Año: 2024 vol. 670

FERREYRA, ROMUALDO ALEJANDRO; LI, BINGJUN; WANG, SIZHEN; HAN, JUNG

Selective area doping of GaN towards high-power applications

JOURNAL OF PHYSICS - D (APPLIED PHYSICS); Año: 2023

FERREYRA, ROMUALDO ALEJANDRO; ALFREDO JUAN

Simulations of Lattice Vibrations in a One-Dimensional Triatomic Network

Physchem; Lugar: Basel; Año: 2023 vol. 3 p. 440 - 450

FIGUEROA, CARLOS; FERREYRA, ROMUALDO ALEJANDRO; MARIN-RAMIREZ, OSCAR; STRAUBE, BENJAMIN; VEGA, NADIA CELESTE; BRIZUELA, HORACIO

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MICROELECTRONIC ENGINEERING; Año: 2022 vol. 263 p. 111855 - 111855

FERREYRA, ROMUALDO ALEJANDRO; QUIROGA, MATIAS ABEL

Ge-GaN deposition: An assistant kMC model

APPLIED SURFACE SCIENCE; Año: 2021 vol. 546

ARIFUMI OKADA; MASAHIRO NAKATANI; LEI CHEN; ROMUALDO A. FERREYRA; KOHEI KADONO

Effect of annealing conditions on the optical properties and surface morphologies of (2¯01)-oriented β-Ga2O3 crystals

APPLIED SURFACE SCIENCE; Lugar: Amsterdam; Año: 2021 vol. 574 p. 151651 - 151659

KAZUKI KODAMA; YUJI ANDO; ROMUALDO ALEJANDRO FERREYRA; XB LIU; DAISUKE UEDA

Development of Growth Equipment Using Pico-second Laser for Gallium Nitride

Journal of Japan Laser Processing Society; Lugar: Osaka; Año: 2019 vol. 26 p. 41 - 45

NAHUEL A. VEGA; SESHAGIRI RAO CHALLA; ROMUALDO ALEJANDRO FERREYRA; CHRISTIAN KRISTUKAT; NAHUEL A. MULLER; MARIO E. DEBRAY; GORDON SCHMIDT; HARTMUT WITTE; JÜRGEN CHRISTEN; ARMIN DADGAR; ANDRÉ STRITTMATTER

Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2019

FERREYRA, ROMUALDO A.; SUZUKI, ASAMIRA; KAZUMOTO, TOMOHIRO; UEDA, DAISUKE

n++GaN Regrowth Technique Using Pico-second Laser Ablation to Form Non-alloy Ohmic Contacts

IEEE ELECTRON DEVICE LETTERS; Año: 2017 vol. 38 p. 1079 - 1081

E. SERMUKSNIS; J. LIBERIS; A. MATULIONIS; V. AVRUTIN; R. A. FERREYRA; Ü. ÖZGÜR; H. MORKOÇ

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Lugar: Londres; Año: 2015 vol. 30

L. ARDARAVICIUS; O. KIPRIJANOVIC; J. LIBERIS; E. SERMUKSNIS; A. MATULIONIS; ROMUALDO ALEJANDRO FERREYRA; V. AVRUTIN; U. OZGUR; H. MORKOÇ

Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Año: 2015 vol. 30

C. ZHU; F. ZHANG; R. A. FERREYRA; X. LI; C. KAYIS; V. AVRUTIN; U. OZGUR; H. MORKOÇ

Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

SPIE; Lugar: Bellingham; Año: 2013 vol. 8625 p. 86252 - 86252

C. Y. ZHU; F. ZHANG; R. A. FERREYRA; V. AVRUTIN; U. OZGUR; H. MORKOÇ

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

APPLIED PHYSICS LETTERS; Lugar: New York; Año: 2013 vol. 103 p. 163504 - 163504

R. A. FERREYRA; X. LI; F. ZHANG; C. ZHU; N. IZYUMSKAYA; C. KAYIS; V. AVRUTIN; U. OZGUR; H. MORKOC

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

SPIE; Lugar: Bellingham; Año: 2013 vol. 8625 p. 86252 - 86252

C. Y. ZHU,; M. WU; C. KAYIS; F. ZHANG; X. LI; R. A. FERREYRA; A. MATULIONIS; V. AVRUTIN; U. OZGUR; H. MORKOÇ

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

APPLIED PHYSICS LETTERS; Lugar: New York; Año: 2012 vol. 101 p. 103502 - 103502

C. KAYIS; R. A. FERREYRA; C. Y. ZHU; V. AVRUTIN; U. OZGUR; H. MORKOÇ

The effect of barrier strain on the reliability of Inx Al1-xN/AlN/GaN heterostructure field-effect transistors

physica status solidi (RRL) - Rapid Research Letters; Lugar: Weinheim; Año: 2012 vol. 6 p. 163 - 165

C. KAYIS; R. A. FERREYRA; C. Y. ZHU; M. WU; X. LI; U. OZGUR; A. MATULIONIS; H. MORKOÇ

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low frequency noise and current-transient methods: Hot-phonon effects

SPIE; Lugar: Bellingham; Año: 2012 vol. 8262 p. 82621 - 82621

C. Y. ZHU; M. WU; C. KAYIS; F. ZHANG; X. LI; R. A. FERREYRA; V. AVRUTIN; U. OZGUR; H. MORKOÇ

Degradation mechanism of InAlN/GaN based HFETs under high electric field stress

SPIE; Lugar: Bellingham; Año: 2012 vol. 8262 p. 826225 - 826225

A. MATULIONIS; J. LIBERIS; E. SERMUKSNIS; L. ARDARAVICIUS; A. SIMUKOVIC; C. KAYIS; C. Y. ZHU; R. A. FERREYRA; V. AVRUTIN; U. OZGUR; H. MORKOÇ

Window for better reliability of nitride heterostructure field effect transistors

MICROELECTRONICS RELIABILITY; Lugar: Amsterdam; Año: 2012 vol. 52 p. 2149 - 2152

R. A. FERREYRA; C. KAYIS; C. Y. ZHU; U. OZGUR; H. MORKOÇ

Measurement of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions

SPIE; Lugar: Bellingham; Año: 2012 vol. 8262 p. 82621 - 82621

C. KAYIS; R. A. FERREYRA; M. WU; X. LI; U. OZGUR; A. MATULIONIS; H. MORKOÇ

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

APPLIED PHYSICS LETTERS; Lugar: New York; Año: 2011 vol. 99 p. 63505 - 63505