PAZOS, SEBASTIAN; ZHENG, WENWEN; ZANOTTI, TOMMASO; AGUIRRE, FERNANDO; BECKER, THALES; SHEN, YAQING; ZHU, KAICHEN; YUAN, YUE; WIRTH, GILSON; PUGLISI, FRANCESCO MARIA; ROLDÁN, JUAN BAUTISTA; PALUMBO, FELIX; LANZA, MARIO

Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Nanoscale; Lugar: NY; Año: 2023 vol. 15 p. 2171 - 2180

PAZOS, SEBASTIAN; BECKER, THALES; VILLENA, MARCO ANTONIO; ZHENG, WENWEN; SHEN, YAQING; YUAN, YUE; ALHARBI, OSAMAH; ZHU, KAICHEN; ROLDÁN, JUAN BAUTISTA; WIRTH, GILSON; PALUMBO, FELIX; LANZA, MARIO

HighTemporal Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

ADVANCED FUNCTIONAL MATERIALS; Lugar: Weinheim; Año: 2023 vol. 34

MAROLI, GABRIEL; BOYERAS, SANTIAGO; GIANNETTA, HERNAN; PAZOS, SEBASTIAN; GAK, JOEL; OLIVA, ALEJANDRO RAÚL; VOLPE, MARÍA ALICIA; JULIAN, PEDRO MARCELO; PALUMBO, FELIX

Analytic circuit model for thermal drying behavior of electronic inks

Frontiers in Electronics; Lugar: NY; Año: 2023 vol. 3

BOYERAS BALDOMÁ, S.; PAZOS, S.M.; AGUIRRE, F.L.; ANKONINA, G.; KORNBLUM, L.; YALON, E.; PALUMBO, F.

Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks

SOLID-STATE ELECTRONICS; Año: 2022 vol. 198

LANZA, MARIO; PALUMBO, FELIX; SHI, YUANYUAN; AGUIRRE, FERNANDO; BOYERAS, SANTIAGO; YUAN, BIN; YALON, EILAM; MORENO, ENRIQUE; WU, TIANRU; ROLDAN, JUAN B.

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022)

Advanced Electronic Materials; Lugar: NY; Año: 2022 vol. 8

AGUIRRE, FERNANDO LEONEL; GOMEZ, NICOLÁS M.; PAZOS, SEBASTIÁN MATÍAS; PALUMBO, FÉLIX; SUÑÉ, JORDI; MIRANDA, ENRIQUE

Minimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition

Journal of Low Power Electronics and Applications; Año: 2021 vol. 11 p. 1 - 18

ROLDAN JUAN; MIRANDA, ENRIQUE; BOYERAS, SANTIAGO; F. PALUMBO

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

JOURNAL OF NANOMATERIALS; Lugar: New York; Año: 2021

LANZA, MARIO; PALUMBO, F. R. M.; YUANYUAN SHI; AGUIRRE, F. L.; BOYERAS, SANTIAGO; YUAN, BIN; YALON, EILAM; ROLDAN JUAN

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Adv. Electron. Mater; Año: 2021

JUAN B. ROLDÁN; LANZA, MARIO; PALUMBO, F. R. M.

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

ACS NANO; Lugar: Washington; Año: 2021

AGUIRRE, F. L.; ALOK RANJAN; NAGARAJAN RAGHAVAN; ANDREA PADOVANI; PAZOS, S. M.; VEGA, NAHUEL; NAHUEL MÜLLER; DEBRAY, MARIO E.; JOEL MOLINA; KIN LEONG PEY; PALUMBO, F. R. M.

Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

APPLIED PHYSICS EXPRESS; Lugar: Tokyo; Año: 2021

LANZA, MARIO; PALUMBO, FELIX; SHI, YUANYUAN; AGUIRRE, FERNANDO; BOYERAS, SANTIAGO; YUAN, BIN; YALON, EILAM; MORENO, ENRIQUE; WU, TIANRU; ROLDAN, JUAN B.

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Advanced Electronic Materials; Lugar: NY; Año: 2021 vol. 8

PAZOS, S. M.; BOYERAS BALDOMÁ, S.; AGUIRRE, F. L.; KRYLOV, I.; EIZENBERG, M.; PALUMBO, F.

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

JOURNAL OF APPLIED PHYSICS; Año: 2020 vol. 127

PAZOS, SEBASTIAN; AGUIRRE, FERNANDO; PALUMBO, FELIX; SILVEIRA, FERNANDO

Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY; Lugar: New York; Año: 2020 vol. 20 p. 33 - 41

MIRON, DROR; COHEN-AZARZAR, DANA; SEGEV, NOA; BASKIN, MARIA; PALUMBO, FELIX; YALON, EILAM; KORNBLUM, LIOR

Band structure and electronic transport across Ta2O5/Nb:SrTiO3interfaces

JOURNAL OF APPLIED PHYSICS; Año: 2020 vol. 128

YUAN, BIN; LIANG, XIANHU; ZHONG, LIUBIAO; SHI, YUANYUAN; PALUMBO, FELIX; CHEN, SHAOCHUAN; HUI, FEI; JING, XU; VILLENA, MARCO A.; JIANG, LIN; LANZA, MARIO

150 nm × 200 nm Cross-Point Hexagonal Boron Nitride-Based Memristors

Advanced Electronic Materials; Año: 2020 vol. 6

AGUIRRE, FERNANDO LEONEL; PAZOS, SEBASTIAN MATIAS; PALUMBO, FELIX; SUNE, JORDI; MIRANDA, ENRIQUE

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

IEEE Access; Año: 2020 vol. 8 p. 202174 - 202193

PAZOS, S.M.; AGUIRRE, F.L.; PALUMBO, F.; SILVEIRA, F.

Hot-carrier-injection resilient RF power amplifier using adaptive bias

MICROELECTRONICS RELIABILITY; Año: 2020 vol. 114

BOYERAS BALDOMÁ, S.; PAZOS, S.M.; AGUIRRE, F.L.; PALUMBO, F.R.

Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance

JOURNAL OF APPLIED PHYSICS; Año: 2020 vol. 128

PALUMBO, FELIX; WEN, CHAO; LOMBARDO, SALVATORE; PAZOS, SEBASTIAN; AGUIRRE, FERNANDO; EIZENBERG, MOSHE; HUI, FEI; LANZA, MARIO

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics

ADVANCED FUNCTIONAL MATERIALS; Año: 2019

FONTANA, ANDRES; PAZOS, SEBASTIAN; AGUIRRE, FERNANDO; VEGA, NAHUEL; MULLER, NAHUEL; DE LA FOURNIERE, EMMANUEL; SILVEIRA, FERNANDO; DEBRAY, MARIO E.; PALUMBO, FELIX

Pulse quenching and charge sharing effects on heavy-ion microbeam induced ASET in a full-custom CMOS OpAmp

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2019 p. 1 - 1

AGUIRRE, FERNANDO LEONEL; RODRIGUEZ-FERNANDEZ, ALBERTO; PAZOS, SEBASTIAN MATIAS; SUÑÉ, JORDI; MIRANDA, ENRIQUE; PALUMBO, FELIX

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES; Año: 2019 vol. 66 p. 3349 - 3355

PALUMBO, FELIX; LIANG, XIANHU; YUAN, BIN; SHI, YUANYUAN; HUI, FEI; VILLENA, MARCO A.; LANZA, MARIO

Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric

Advanced Electronic Materials; Año: 2018

AGUIRRE, F.; PAZOS, S.; PALUMBO, F. R. M.; FADIDA, S.; WINTER, R.; EIZENBERG, M.

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

JOURNAL OF APPLIED PHYSICS; Año: 2018 vol. 123

PAZOS, S.M.; AGUIRRE, F.L.; PALUMBO, F.; SILVEIRA, F.

Performance-reliability trade-offs in short range RF power amplifier design

MICROELECTRONICS RELIABILITY; Año: 2018 vol. 88 p. 38 - 42

PALUMBO, FELIX; AGUIRRE, FERNANDO L.; PAZOS, SEBASTIAN M.; KRYLOV, IGOR; WINTER, ROY; EIZENBERG, MOSHE

Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

SOLID-STATE ELECTRONICS; Año: 2018 vol. 149 p. 71 - 77

KRYLOV, IGOR; XU, XIANBIN; ZOUBENKO, EKATERINA; WEINFELD, KAMIRA; BOYERAS, SANTIAGO; PALUMBO, FELIX; EIZENBERG, MOSHE; RITTER, DAN

Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A - VACUUM SURFACES AND FILMS; Año: 2018 vol. 36

PAZOS, S.M.; AGUIRRE, F.L.; TANG, K.; MCINTYRE, P.; PALUMBO, F.

Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks

JOURNAL OF APPLIED PHYSICS; Año: 2018 vol. 124

JIANG, LANLAN; SHI, YUANYUAN; HUI, FEI; TANG, KECHAO; WU, QIAN; PAN, CHENGBIN; JING, XU; UPPAL, HASAN; PALUMBO, FELIX; LU, GUANGYUAN; WU, TIANRU; WANG, HAOMIN; VILLENA, MARCO A.; XIE, XIAOMING; MCINTYRE, PAUL C.; LANZA, MARIO

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

ACS APPLIED MATERIALS & INTERFACES; Año: 2017 vol. 9 p. 39758 - 39770

PAZOS, S.; AGUIRRE, F.; MIRANDA, E.; LOMBARDO, S.; PALUMBO, F.

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

JOURNAL OF APPLIED PHYSICS; Año: 2017 vol. 121

FELIX PALUMBO; WINTER, R.; TANG, K.; MCINTYRE, P. C.; EIZENBERG, M.

Investigation of stress induced interface states in Al 2 O 3 /InGaAs metal-oxide-semiconductor capacitors

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2017 vol. 121

PALUMBO, F.; PAZOS, S.; AGUIRRE, F.; WINTER, R.; KRYLOV, I.; EIZENBERG, M.

Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

SOLID-STATE ELECTRONICS; Año: 2017 vol. 132 p. 12 - 18

TANG, KECHAO; PALUMBO, FELIX ROBERTO; ZHANG, LIANGLIANG; DROOPAD, RAVI; MCINTYRE, PAUL C.

Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

ACS APPLIED MATERIALS & INTERFACES; Año: 2017 vol. 9 p. 7819 - 7825

GIMENEZ, ROCÍO; DELGADO, DIANA C.; PALUMBO, FÉLIX; BERLI, CLAUDIO L.A.; BELLINO, MARTÍN G.

Mesoporous metal-oxide-semiconductor capacitors detect intra-porous fluid changes

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS; Año: 2017 vol. 524 p. 66 - 70

FELIX PALUMBO; SALVATORE A. LOMBARDO; MOSHE EIZENBERG

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

MICROELECTRONICS RELIABILITY; Lugar: Amsterdam; Año: 2016 vol. 56 p. 22 - 28

FELIX PALUMBO; MARIO DEBRAY; N. VEGA; C. QUINTEROS; A. KALSTEIN; F. GUARIN

Evolution of the gate current in 32 nm MOSFETs under irradiation

SOLID-STATE ELECTRONICS; Lugar: Amsterdam; Año: 2016 vol. 119 p. 19 - 24

PALUMBO, FELIX; I. KRYLOV; MOSHE EIZENBERG

Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2015 vol. 117 p. 1 - 8

FELIX PALUMBO; P. SHEKHTER; K. COHEN WEINFELD; MOSHE EIZENBERG

Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

APPLIED PHYSICS LETTERS; Lugar: New York; Año: 2015 vol. 107 p. 1 - 4

R.PAGANO; S.LOMBARDO; FELIX PALUMBO; D. SANFILIPPO; G. VALVO; G. FALLICA; S. LIBERTINO

Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation

NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A - ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPAMENT; Lugar: Amsterdam; Año: 2014 vol. 767

P. SHEKHTER; FELIX PALUMBO; K. COHEN WEINFELD; M. EIZENBERG

X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks

APPLIED PHYSICS LETTERS; Lugar: New York; Año: 2014 vol. 105

PALUMBO, FELIX; SALVATORE A. LOMBARDO; M. EIZENBERG

Physical mechanism of progressive breakdown in gate oxides

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2014 vol. 115

FELIX PALUMBO; R. WINTER; I. KRYLOV; M. EIZENBERG

Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks

APPLIED PHYSICS LETTERS; Lugar: New York; Año: 2014 vol. 104

FELIX PALUMBO; MOSHE EIZENBERG

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2014 vol. 115 p. 1 - 8

FELIX PALUMBO; P. SHEKHTER; MOSHE EIZENBERG

Influence of the oxide/semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

SOLID-STATE ELECTRONICS; Lugar: Amsterdam; Año: 2014 vol. 93 p. 56 - 60

FELIX PALUMBO; P. SHEKHTER; I. KRYLOV; D. RITTER; M. EIZENBERG

Resistive switching effect on Al2O3 / InGaAs stacks

MICROELECTRONIC ENGINEERING; Lugar: Amsterdam; Año: 2013 vol. 109 p. 83 - 86

SIVAN FADIDA; FELIX PALUMBO; LAURA NYNS; DENNIS LIN; SVEN VAN ELSHOCHT; MATTY CAYMAX; MOSHE EIZENBERG

Hf-based high-k dielectrics for p-Ge MOS gate stacks

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B; Año: 2013 vol. 32 p. 1 - 7

G. HUBERT; R. VELAZCO; C. FEDERICO; A. CHEMINET; C. SILVA-CARDENAS; L.V.E. CALDAS; F. PANCHER; V. LACOSTE; FELIX PALUMBO; W. MANSOUR; L. ARTOLA; F. PINEDA; S.DUZELLIER

Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP 3

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2013 vol. 60 p. 2418 - 2426

CORSO, DOMENICO; LIBERTINO, SEBANIA; M. LISIANSKY; ROIZIN, YAKOV; FELIX PALUMBO; F. PRINCIPATO; PACE, CALOGERO; PAOLO FINOCCHIARO; SALVATORE LOMBARDO

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

IEEE TRANSACTIONS ON ELECTRON DEVICES; Lugar: New York; Año: 2012 vol. 59 p. 2597 - 2602

C. QUINTEROS; FELIX PALUMBO; F. CAMPABADAL; E. MIRANDA

Stress Conditions to Study the Reliability Characteristics of High-k Nanolaminates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY; Año: 2012 vol. 49 p. 161 - 168

LIBERTINO, SEBANIA; D. CORSO; LISIANSKY, MICHAEL; ROIZIN, YAKOV; FELIX PALUMBO; F. PRINCIPATO; PACE, CALOGERO; LOMBARDO, SALVATORE

Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2012 vol. 59 p. 3016 - 3020

FELIX PALUMBO; E. MIRANDA; G. GHIBAUDO; V. JOUSSEAUME

Formation and Characterization of Filamentary Current Paths in HfO2-Based Resistive Switching Structures

IEEE ELECTRON DEVICE LETTERS; Lugar: New York; Año: 2012 vol. 33 p. 1057 - 1059

C. QUINTEROS; L. SALOMONE; E. REDIN; J.M. RAFÍ; M. ZABALA; A. FAIGON; FELIX PALUMBO; F. CAMPABADAL

Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, O and p Radiation

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2012 vol. 59 p. 767 - 772

FELIX PALUMBO; A. FAIGON; GIUSEPPE CURRO

Electrical Correlation of Double-Diffused Metal-Oxide-Semiconductor Transistors Exposed to Gamma Photons, Protons and Hot-Carriers

IEEE TRANSACTIONS ON ELECTRON DEVICES; Año: 2011 vol. 58 p. 1476 - 1482

FELIX PALUMBO; E. MIRANDA

Modeling of the Tunneling Current in MOS Devices After Proton Irradiation Using a Nonlinear Series Resistance Correction

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2011 vol. 58 p. 770 - 775

E. MIRANDA; FELIX PALUMBO

Analytic expression for the FN V-I characteristic including the series resistance

SOLID-STATE ELECTRONICS; Año: 2011 vol. 61 p. 93 - 95

FELIX PALUMBO; C. QUINTEROS; F. CAMPABADAL; J.M. RAFÍ; M. ZABALA; E. MIRANDA

Soft Breakdown in Irradiated High-K Nanolaminates

MICROELECTRONIC ENGINEERING; Año: 2011 vol. 88 p. 1425 - 1427

FELIX PALUMBO; E. MIRANDA; G. GHIBAUDO; V. JOUSSEAUME

Model and Fitting Results for the Filamentary Conduction in MIM Resistive Switching Devices

Electrochemical Society ECS Transactions; Año: 2011 vol. 39 p. 187 - 193

LISIANSKY, MICHAEL; CASSUTO, GIL; ROIZIN, YAKOV; CORSO, DOMENICO; LIBERTINO, SEBANIA; MARINO, ANTONIO; LOMBARDO, SALVATORE; CRUPI, ISODIANA; PACE, CALOGERO; CRUPI, FELICE; DELLA SALA, ERNESTO; CAPUANO, GIUSEPPE; PALUMBO, FELIX

Radiation Tolerance of NROM Embedded Products

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2010 vol. 57 p. 2309 - 2317

S. LIBERTINO; D. CORSO; G. MURE; A. MARINO; FELIX PALUMBO; F. PRINCIPATO; G. CANNELLA; T. SCHILLACI; S. GIARUSSO; F. CELI; M. LISIANSKY; Y. ROIZIN; SALVATORE LOMBARDO

Radiation effects in nitride read-only memories

MICROELECTRONICS RELIABILITY; Año: 2010 vol. 50 p. 1857 - 1860

FELIX PALUMBO; E. MIRANDA; K. CHERKAOUI; P.K. HURLEY; M. A. NEGARA

Effects of high-energy ion irradiation on the conduction characteristics of HfO2-based MOSFET devices

Electrochemical Society Transactions ECS; Año: 2010 vol. 31 p. 327 - 332

LOZANO A.; PALUMBO, FELIX; M. ALURRALDE

Radiation Effects on SOI Microrelays for Space Applications

Electrochemical Society ECS Transactions; Lugar: New Jersey; Año: 2009 vol. 23 p. 279 - 285

D. CORSO; A. PALERMO; FELIX PALUMBO; S. LIBERTINO; SALVATORE LOMBARDO; M. LISIANSKY; Y. ROIZIN

Radiation Effects on Programmed NROM Cells

Electrochemical Society Transactions ECS; Año: 2008 vol. 14 p. 311 - 317

ROBERTO PAGANO; SALVATORE A. LOMBARDO; FELIX PALUMBO; P. KIRSCH; S.A. KRISHNAN; C. YOUNG; C. CHOI; G. BERSUKER; JAMES H. STATHIS

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

Microelectronics Reliability; Año: 2008 vol. 48 p. 1759 - 1764

ROBERTO PAGANO; SALVATORE LOMBARDO; FELIX PALUMBO; S. CARLONI; P. KIRSCH; S.A. KRISHNAN; C. YOUNG; R. CHOI; G. BERSUKER; JAMES H. STATHIS

A new methodology for characterizing the progressive BD of HfO2/SiO2 metal gate

Electrochemical Society Transactions; Año: 2008 vol. 14 p. 303 - 310

GIOVANNI CONDORELLI; SALVATORE A. LOMBARDO; FELIX PALUMBO; KIN-LEONG PEY; CHIH HANG TUNG; LEI-JUN TANG

Structure and Conductance of the Breakdown Spot During the Early Stages of Progressive Breakdown

IEEE Transactions on Device and Materials Reliability; Año: 2006 vol. 6 p. 534 - 541

FELIX PALUMBO; GIOVANNI CONDORELLI; SALVATORE A. LOMBARDO; KIN LEONG PEY; CHIH HANG TUNG; LEI JUN TANG

Structure of the oxide damage under progressive breakdown

MICROELECTRONICS RELIABILITY; Año: 2005 vol. 45 p. 845 - 848

SALVATORE LOMBARDO; JAMES H. STATHIS; BARRY P. LINDER; KIN LEONG PEY; FELIX PALUMBO; CHIH HANG TUNG

Dielectric breakdown mechanisms in gate oxides

Applied Physics Reviews; Año: 2005 vol. 98 p. 1 - 36

FELIX PALUMBO; E. MIRANDA; SALVATORE A. LOMBARDO

Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model

MICROELECTRONIC ENGINEERING; Año: 2005 vol. 80 p. 166 - 169

FELIX PALUMBO; SALVATORE A. LOMBARDO; JAMES H. STATHIS; V. NARAYANAN; F.R. MCFEELY; J.J. YURKAS

Reliability of MOS devices with tungsten gates

MICROELECTRONIC ENGINEERING; Año: 2004 vol. 72 p. 45 - 49

FELIX PALUMBO; ADRIAN N. FAIGON; FRANCESCA CAMPABADAL

Radiation and injection effects on metal-oxide-semiconductor devices using the gate-controlled-diode technique

JOURNAL OF APPLIED PHYSICS; Año: 2004 vol. 96 p. 7591 - 7595

CHIH HANG TUNG; KIN LEONG PEY; LEI JUN TANG; M. K. RADHAKRISHNAN; WEN HE LIN; FELIX PALUMBO; SALVATORE LOMBARDO

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

APPLIED PHYSICS LETTERS; Año: 2003 vol. 83 p. 2223 - 2225

R. LOMBARDI; FELIX PALUMBO; G. REDIN; D. RUS; A. FAIGON

CARGA POSITIVA Y ESTADOS DE INTERFAZ EN ESTRUCTURAS MOS IRRADIADAS GAMMA

Anales de la Asociacion Argentina de Fisica; Año: 2000 vol. 12 p. 314 - 317

R. LOMBARDI; G. REDIN; FELIX PALUMBO; A. FAIGON

Aplicacion del Modelo Subumbral para Determinacion de Estados Superficiales Rapidos

Anales de la Asociacion Argentina de Fisica; Año: 1998 vol. 10 p. 218 - 220