Photocurrent Generation in Thin SnO2 Nanocrystalline Semiconductor Film Electrodes from Photoinduced Charge-Separation State in Porphyrin-C60 Dyad

. FUNGO, L. OTERO, C. D. BORSARELLI, E. N. DURANTINI, J. J. SILBER, AND L. SERENO

JOURNAL OF PHYSICAL CHEMISTRY B

acs

Año: 2002 vol. 106 p. 4070 - 4078

1089-5647

The generation of photoelectrical effects through the spectral sensitization of wide band gap (SnO2) nanostructured semiconductor electrode by the excitation of a novel porphyrin-fullerene (P-C60) dyad is reported. P-C60 was synthesized from 5-(4-amidophenyl)-10,15,20-tris(4-methoxylphenyl) porphyrin (P) linked to 1,2-dihydro-1,2-methoxyphenyl [60]-61-carboxilic acid (acid-C60) by an amide bond. Anodic photocurrents and photovoltages are observed under visible irradiation of ITO/SnO2/ P-C60 electrodes, although the porphyrin fluorescence is strongly quenched by the C60 moiety in the dyad. The photocurrent generation quantum yield of the dyad P-C60 is around twice higher than the yield of the porphyrin moiety at the same wavelength (Soret band). A mechanism involving the formation of an intramolecular photoinduced charge-transfer state is proposed to explain the efficiency in the generation of photoelectrical effect.