Large memcapacitance and memristance at Nb:SrTiO 3 /La 0.5 Sr 0.5 Mn 0.5 Co 0.5 O 3-δ topotactic redox interface

ROMÁN ACEVEDO, W.; VAN DEN BOSCH, C. A. M.; AGUIRRE, M. H.; ACHA, C.; CAVALLARO, A.; FERREYRA, C.; SÁNCHEZ, M. J.; PATRONE, L.; AGUADERO, A.; RUBI, D.

APPLIED PHYSICS LETTERS

AMER INST PHYSICS

Lugar: New York; Año: 2020 vol. 116

0003-6951

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La0.5Sr0.5Mn0.5Co0.5O3-δ (LSMCO, 0 ≤ δ ≤ 0.62). We demonstrate that the multi-mem behavior originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO3/LSMCO/Pt devices a memcapacitive effect CHIGH/CLOW ∼ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.