Ion implantation inducing two-way shape memory effect in Cu-Al-Ni thin films

M. MORAN; A. M. CONDO; S. SUAREZ; F. SOLDERA; N. HABERKORN

MATERIALS LETTERS

ELSEVIER SCIENCE BV

Lugar: Amsterdam; Año: 2019 vol. 255 p. 126569 - 126572

0167-577X

We report two-way shape memory effect (TWSME) induced by Al ion implantation in 6 m thick Cu-Al-Ni thin films. The films display an average grain size of 3.7 um and a martensitic transformation temperature (MS) of approximately 220 K. The film was irradiated with 2 MeV Al ions with a fluence of 6x1015 ion.cm-2 (penetration distance up to 1.1 um). After irradiation, the film displays well defined TWSME with a radius of curvature of 1 mm. The results indicate that the irradiation produces mainly changes in the austenitic order.