A compact model for binary oxides-based memristive interfaces

NÉSTOR GHENZI , MARIA JOSE SANCHEZ AND PABLO LEVY

JOURNAL OF PHYSICS - D (APPLIED PHYSICS)

IOP PUBLISHING LTD

Año: 2013 vol. 46 p. 415101 - 415101

0022-3727

We report the resistive switching (RS) characteristics of Al/TiO2 /Au memristive cells fabricated in a crossbar array. The measured R?V curves suggest that RS takes placeessentially at the Au/TiO2 interface. We propose a model based on the electric field enhancedmigration of oxygen vacancies at that interface which reproduces the main features of theexperimental data, namely the remnant resistance states and the degradation process. Obtainedvacancy profiles at the active region of the junction give insight for the design of improveddevices.