Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

P. STOLIAR, P. LEVY, M. J. SANCHEZ, A. G. LEYVA, C. A. ALBORNOZ, F. GOMEZ-MARLASCA, A. ZANINI, C. TORO SALAZAR, N. GHENZI, AND M. J. ROZENBERG

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: Albuquerque; Año: 2014 vol. 61 p. 21 - 25

1549-7747

We study the resistive switching (RS) mechanism as away to obtain multilevel cell (MLC) memory devices. In an MLC,more than 1 b of information can be stored in each cell. Here,we identify one of the main conceptual difficulties that preventedthe implementation of RS-based MLCs. We present a method toovercome these difficulties and to implement a 6-b MLC devicewith a manganite-based RS device. This is done by preciselysetting the remnant resistance of the RS device to an arbitraryvalue. Our MLC system demonstrates that transition metal oxidenonvolatile memory devices may compete with currently availableMLCs.