Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

N. GHENZI ; M. J. SÁNCHEZ; M.J. ROZENBERG; P. STOLIAR, F.Z-MARLASCA, D. RUBI ANDP. LEVY

JOURNAL OF APPLIED PHYSICS

AMER INST PHYSICS

Lugar: New York; Año: 2012 vol. 111 p. 84512 - 84516

0021-8979

We explore different resistance states of La0:325 Pr0:300 Ca0:375 MnO3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance statesaccessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives theresistance towards saturation, the time constant being a strong function of the pulsing amplitude.The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate thatresults independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments.