Asymmetric pulsing for reliable operation of titanium/manganite memristors

F. GOMEZ-MARLASCA, N. GHENZI, P. STOLIAR, M. J. SÁNCHEZ, M. J. ROZENBERG,G. LEYVA, AND P. LEVY

APPLIED PHYSICS LETTERS

AMER INST PHYSICS

Año: 2011 vol. 98 p. 123502 - 1235023

0003-6951

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced theresults with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.