A mechanism for unipolar resistance switching in oxide nonvolatile memory devices

M. J. SÁNCHEZ, M.J.ROZENBERG AND I.H.INOUE

APPLIED PHYSICS LETTERS

Año: 2007 vol. 91 p. 252101 - 252103

0003-6951

We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. © 2007 American Institute of Physics.  DOI: 10.1063/1.2824382