Strong electron correlation effects in non-volatile electronic memory devices

M.J.ROZENBERG, I.H.INOUE AND M.J.SÁNCHEZ

APPLIED PHYSICS LETTERS

Año: 2006 vol. 88 p. 33510 - 33510

0003-6951

We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device.