Conductance distribution of 1d disorder wires at finite temperature and bias voltage

F.FOIERI, M. J. SÁNCHEZ, L. ARRACHEA AND V. GOPAR

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

Año: 2006 vol. 74 p. 165313 - 165313

0163-1829

We calculate the distribution of the conductance G in a one-dimensional disordered wire at finite temperature T and bias voltage V in an independent-electron picture and assuming full coherent transport. At high enough temperature and bias voltage, where several resonances of the system contribute to the conductance, the distribution P(G T,V ) can be represented with good accuracy by autoconvolutions of the distribution of the conductance at zero temperature and zero bias voltage. The number of convolutions depends on T and V. In the regime of very low T and V, where only one resonance is relevant to G T,V , the conductance distribution is analyzed by a resonant tunneling conductance model. Strong effects of finite T and V on the conductance distribution are observed and well described by our theoretical analysis, as we verify by performing a number of numerical simulations of a one-dimensional disordered wire at different temperatures, voltages, and lengths of the wire. Analytical estimates for the first moments of P(G T,V ) at high temperature and bias voltage are also provided.