Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

ALBERTO CAMJAYI; R. CHITRA; MARCELO JAVIER ROZENBERG

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

Año: 2006 vol. 73 p. 41103 - 41103

0163-1829

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases.In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a "bad metal" state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the charge compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line.