Low Temperature Thermoelectric Power fo Ce(Pd1-xCux)2Si2

S. ENCINA; P. PEDRAZZINI

JOURNAL OF LOW TEMPERATURE PHYSICS

SPRINGER/PLENUM PUBLISHERS

Lugar: New York; Año: 2015 vol. 179 p. 21 - 27

0022-2291

We present the thermoelectric power S(T) of the Ce(Pd1−x Cux )2 Si2 alloy for temperatures 1.5 K < T < 300 K. We observe three characteristic features across the 0 < x < 1 substitution range: two positive maxima and a negative minimum, that are typical for Ce compounds that display, or lie close to, magnetism. Our analysis of the data shows that the high-T maximum is related to the Kondo effect on excited crystal-field levels, but that the low-T one cannot be simply associated with the Kondo scale, TK . We speculate that disorder induced by alloying can be at the origin of this discrepancy and can also be responsible for the low S(T ) measured at low temperatures in the 0.2 < x < 0.8 concentration range. We have extended electrical resistivity measurements on Ce(PdCu)Si2 (x = 0.5) down to T ∼ 40 mK in applied fields as high as 16 T.