Using ion irradiation to make high-Tc Josephson junctions

N. BERGEAL; J. LESEUR; M. SIRENA; G. FAINI; M. APRILI; J. P. CONTOUR; B. LERIDON

JOURNAL OF APPLIED PHYSICS

Año: 2007 p. 83903 - 83913

0021-8979

In this article we describe the effect of ion irradiation on high-Tc superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-Tc film and a mesa one defined in a trilayer structure. © 2007 American Institute of Physics. © 2007 American Institute of Physics. © 2007 American Institute of Physics. interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-Tc film and a mesa one defined in a trilayer structure. © 2007 American Institute of Physics. © 2007 American Institute of Physics. © 2007 American Institute of Physics. interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-Tc film and a mesa one defined in a trilayer structure. © 2007 American Institute of Physics. © 2007 American Institute of Physics. © 2007 American Institute of Physics. Tc superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-Tc film and a mesa one defined in a trilayer structure. © 2007 American Institute of Physics. © 2007 American Institute of Physics. © 2007 American Institute of Physics. Tc film and a mesa one defined in a trilayer structure. © 2007 American Institute of Physics. 2007 American Institute of Physics.