Improving ion irradiated high Tc Josephson junctions by annealing:The role of vacancy-intertitial annehilation

M. SIRENA; S. MATZEN; N. BERGEAL; J. LESUEUR; G. FAINI; R. BERNARD; J. BRIATICO; D. G. CRÉTÉ

APPLIED PHYSICS LETTERS

Año: 2007 vol. 91 p. 142506 - 142508

0003-6951

The authors have studied the annealing effect in the transport properties of high Tc Josephson junctions JJs made by ion irradiation. Low temperature annealing 80 °C increases the JJ coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. junctions JJs made by ion irradiation. Low temperature annealing 80 °C increases the JJ coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. Tc Josephson junctions JJs made by ion irradiation. Low temperature annealing 80 °C increases the JJ coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. JJs made by ion irradiation. Low temperature annealing 80 °C increases the JJ coupling temperature TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics. TJ and the IcRn product, where Ic is the critical current and Rn the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one. © 2007 American Institute of Physics.2007 American Institute of Physics.