Combining half-metals and multiferroics into epitaxial

H. BÉA; M. BIBES; M. SIRENA; G. HERRANZ; K. BOUZEHOUANE; E. JACQUET; S. FUSIL; P. PARUCH; M. DAWBER; J.-P. CONTOUR; A. BARTHÉLÉMY

APPLIED PHYSICS LETTERS

Año: 2006 p. 62502 - 62504

0003-6951

We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 LSMO half-metallic ferromagnet and the BiFeO3 BFO multiferroic, on SrTiO3001 by pulsed laser deposition. The growth mode of both layers is two dimensional, which results in unit-cell smooth surfaces.We show that both materials keep their properties inside the heterostructures, i.e., the LSMO layer 11 nm thick is ferromagnetic with a Curie temperature of 330 K, while the BFO films shows ferroelectricity down to very low thicknesses 5 nm. Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. © 2006 American Institute of Physics.2/3Sr1/3MnO3 LSMO half-metallic ferromagnet and the BiFeO3 BFO multiferroic, on SrTiO3001 by pulsed laser deposition. The growth mode of both layers is two dimensional, which results in unit-cell smooth surfaces.We show that both materials keep their properties inside the heterostructures, i.e., the LSMO layer 11 nm thick is ferromagnetic with a Curie temperature of 330 K, while the BFO films shows ferroelectricity down to very low thicknesses 5 nm. Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. © 2006 American Institute of Physics.3 BFO multiferroic, on SrTiO3001 by pulsed laser deposition. The growth mode of both layers is two dimensional, which results in unit-cell smooth surfaces.We show that both materials keep their properties inside the heterostructures, i.e., the LSMO layer 11 nm thick is ferromagnetic with a Curie temperature of 330 K, while the BFO films shows ferroelectricity down to very low thicknesses 5 nm. Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. © 2006 American Institute of Physics.11 nm thick is ferromagnetic with a Curie temperature of 330 K, while the BFO films shows ferroelectricity down to very low thicknesses 5 nm. Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. © 2006 American Institute of Physics. is ferromagnetic with a Curie temperature of 330 K, while the BFO films shows ferroelectricity down to very low thicknesses 5 nm. Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. © 2006 American Institute of Physics.5 nm. Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. © 2006 American Institute of Physics.2006 American Institute of Physics.