Investigation of proton damage in III-V semiconductors by optical spectroscopy

E. YACCUZZI; SEVAK KHACHADORIAN; S. SUAREZ; M. REINOSO; A. R. GOÑI; A. STRITTMATTER; A. HOFFMANN; GIUDICI, PAULA

JOURNAL OF APPLIED PHYSICS

AMER INST PHYSICS

Lugar: New York; Año: 2016

0021-8979

We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAsstructure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. Theirradiation was performed parallel to the sample surface in order to determine the protonpenetration range in both compounds. An increase in the intensity of longitudinal optical phononsand a decrease in the luminescence were observed. We associate these changes with the creation ofdefects in the damaged region, also responsible for the observed change of the carrier concentrationin the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. Fromthe spatially resolved profile of the PL and phonon intensities, we obtained the proton range in bothmaterials and we compared them with stopping and range of ions in matter simulations. The com-parison between the experimentally obtained proton range and simulations shows a very goodagreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained interms of limitations of the model to simulate the electronic orbitals and bonding structure of thesimulated compound. In order to overcome this limitation, we propose an increase in 40% in theelectronic stopping power for InGaP