Resonant Raman scattering in semiconductor microcavities

A. FAINSTEIN, B. JUSSERAND, R. ANDRÉ, V. THIERRY-MIEG

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

WILEY-V C H VERLAG GMBH

Año: 1999 vol. 215 p. 403 - 407

0370-1972

We present first-order resonant Raman scattering results on III-V and II-VI semiconductor QW embedded planar microcavities, as a function of both laser incidence angle and cavity-exciton detuning. We show that the results can be well described by a simple expression for the scattering efficiency, sigma(pol) proportional to (SpiSxi) (SpsSxs), where S-p and S-x are the photonic and excitonic strength, respectively, of the incoming and scattered cavity polaritons. We discuss the assumptions leading to this expression in terms of existing theories of polariton mediated scattering in bulk, adapted to optically confined structures.