Linear birefringence in GaAs/AlAs multiple quantum wells

A. A. SIRENKO, P. ETCHEGOIN, A. FAINSTEIN, K. EBERL AND M. CARDONA

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

WILEY-V C H VERLAG GMBH

Año: 1999 vol. 215 p. 241 - 246

0370-1972

Transmission spectroscopy has been used to investigate the in-plane linear birefringence of GaAs/ ALAs multiple quantum wells (MQWs) with symmetric wells/barriers from 20/20 to 70/70 Angstrom. Varying optical thicknesses of the samples have been used to measure a reference value of the birefringence. While the resonant part in the dispersion of the birefringence has been attributed to the contribution from the confined electronic gaps, a nonresonant background birefringence has been analyzed as a function of the MQW period and explained by the presence of local fields.