Influence of random point defects introduced by proton irradiation on the flux creep rates and magnetic field dependence of the critical current density Jc of co-evaporated GdBa2Cu3O7-d coated conductors

N. HABERKORN; JEEHOON KIM; S. SUAREZ; JAE-HUN LEE; S. H. MOON

SUPERCONDUCTOR SCIENCE AND TECHNOLOGY

IOP PUBLISHING LTD

Lugar: Londres; Año: 2015 vol. 28 p. 125007 - 125013

0953-2048

We report the influence of random point defects introduced by 3 MeV proton irradiation (doses of 0.5x1016, 1 x1016, 2 x1016 and 6 x1016 cm-2) on the vortex dynamics of co-evaporated 1.3 um thick, GdBa2Cu3O7-d coated conductors. Our results indicate that the inclusion of additional random point defects reduces the low field and enhances the in-field critical current densities Jc. The main in-field Jc enhancement takes place below 40 K, which is in agreement with the expectations for pinning by random point defects. In addition, our data shows a slight though clear increase in flux creep rates as a function of irradiation fluence. Maley analysis indicates that this increment can be associated with a reduction in the exponent u characterizing the glassy behavior.